Study on Phonon Localization in Silicon Film by Molecular Dynamics

In recent years, nanoscale thermal cloaks have received extensive attention from researchers. Amorphization, perforation, and concave are commonly used methods for building cloaks. However, the comparison of three effect different structural proportions on phonon localization not been found. Therefore, in this paper, an asymmetrical structure is constructed to study influence by amorphization, silicon film. We first calculated density states (PDOS) mode participation rate (MPR). To quantitatively explore its localization, we proposed concept degree (DPL) explored center edge effects localization. found that processing methods, increased with increase regions. Compared edge, had a stronger higher disorder, Our research can guide construction cloak.